The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Aug. 27, 2014
Applicant:
Cavendish Kinetics, Inc., San Jose, CA (US);
Inventor:
Mickael Renault, San Jose, CA (US);
Assignee:
CAVENDISH KINETICS, INC., San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 7/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); H01G 5/18 (2006.01); H01H 59/00 (2006.01); H01H 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0006 (2013.01); B81B 3/0078 (2013.01); B81C 1/00095 (2013.01); B81C 1/00341 (2013.01); H01G 5/18 (2013.01); H01H 59/0009 (2013.01); B81B 2201/0221 (2013.01); H01H 1/0036 (2013.01); H01H 2001/0052 (2013.01); H01H 2001/0084 (2013.01);
Abstract
The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.