The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Dec. 15, 2017
Tagore Technology, Inc., Arlington Heights, IL (US);
Manish N. Shah, Vernon Hills, IL (US);
Amitava Das, Barrington Hills, IL (US);
Tagore Technology, Inc., Arlington Heights, IL (US);
Abstract
A HEMT cell includes two or more gallium nitride ('GaN') high-electron-mobility transistor ('HEMT') devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.