The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Mar. 16, 2016
Applicant:

Cirrus Logic International Semiconductor Ltd., Edinburgh, GB;

Inventors:

Shanjen Pan, Austin, TX (US);

Marc L. Tarabbia, Austin, TX (US);

Christian Larsen, Austin, TX (US);

Assignee:

Cirrus Logic, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/217 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H03F 3/185 (2006.01); H01L 27/088 (2006.01); H03F 3/187 (2006.01); H03F 3/45 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H03F 3/185 (2013.01); H01L 21/823425 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 28/00 (2013.01); H01L 29/0696 (2013.01); H01L 29/0847 (2013.01); H01L 29/66659 (2013.01); H03F 3/187 (2013.01); H03F 3/2171 (2013.01); H03F 3/2178 (2013.01); H03F 3/45475 (2013.01); H01L 21/823418 (2013.01); H01L 27/0207 (2013.01); H03F 2200/03 (2013.01); H03F 2200/366 (2013.01);
Abstract

Transistors may be manufactured with a shared drain to reduce die area consumed by circuitry. In one example, two transistors can be manufactured that include two body regions that abut a shared drain region. The two transistors can be independently operated by coupling terminals to a source and a gate for each transistor and the shared drain. Characteristics of the two transistors can be controlled by adjusting feature sizes, such as overlap between the gate and the shared drain for a transistor. In particular, two transistors with different voltage requirements can be manufactured using a shared drain structure, which can be useful in amplifier circuitry and in particular Class-D amplifiers.


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