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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10297720 B1

PDFFull Text
Date of Patent:
May. 21, 2019

Filed:

Oct. 22, 2015

Light emitting diode and method of manufacturing the same

Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Hyeon Chae, Ansan-si, KR;

Jong Min Jang, Ansan-si, KR;

Won Young Roh, Ansan-si, KR;

Daewoong Suh, Ansan-si, KR;

Dae Sung Cho, Ansan-si, KR;

Joon Sup Lee, Ansan-si, KR;

Kyu Ho Lee, Ansan-si, KR;

Chi Hyun In, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:

Perkins Coie LLP

Primary Examiner:

Daniel Whalen

Assistant Examiner:

Suberr Chi

Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/40 (2010.01); H01L 33/22 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/12 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 33/08 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.

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