The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Apr. 05, 2018
Applicant:

Wisconsin Alumni Research Foundation, Madison, WI (US);

Inventors:

Zhenqiang Ma, Middleton, WI (US);

Dong Liu, Madison, WI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/06 (2010.01); H01L 33/26 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/22 (2010.01); H01L 33/14 (2010.01); H01L 33/44 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/005 (2013.01); H01L 33/0012 (2013.01); H01L 33/14 (2013.01); H01L 33/16 (2013.01); H01L 33/22 (2013.01); H01L 33/26 (2013.01); H01L 33/44 (2013.01); H01L 33/40 (2013.01); H01L 2933/0016 (2013.01);
Abstract

Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The light-emitting devices include: a tunneling heterojunction as a hole injector; an n-type contact; and a light-emitting active region disposed between the tunneling heterojunction and the n-type contact. The tunneling heterojunction facilitates interband tunneling hole injection under bias, whereby electrons in the valence band of a p-type group III-nitride semiconductor tunnel directly into the conduction band of the n-type doped semiconductor, resulting in the generation of holes in the p-type group III-nitride.


Find Patent Forward Citations

Ma, Zhenqiang. (2019). Heterogeneous tunneling junctions for hole injection in nitride based light-emitting devices (U.S. Patent No. 10297714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10297714

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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