The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Jun. 23, 2014
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Andreas Bibl, Los Altos, CA (US);
John A. Higginson, Santa Clara, CA (US);
Hung-Fai Stephen Law, Los Altos, CA (US);
Hsin-Hua Hu, Los Altos, CA (US);
Assignee:
Apple Inc., Cupertino, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/04 (2010.01); F21V 7/00 (2006.01); H01L 29/06 (2006.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/28 (2010.01); H01L 33/30 (2010.01); H01L 25/075 (2006.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); F21V 7/00 (2013.01); H01L 27/15 (2013.01); H01L 29/0684 (2013.01); H01L 33/0079 (2013.01); H01L 33/04 (2013.01); H01L 33/28 (2013.01); H01L 33/30 (2013.01); H01L 25/0753 (2013.01); H01L 33/20 (2013.01); H01L 2224/95 (2013.01);
Abstract
A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.