The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Nov. 27, 2015
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Masahiro Nada, Tokyo, JP;
Yoshifumi Muramoto, Tokyo, JP;
Fumito Nakajima, Tokyo, JP;
Hideaki Matsuzaki, Tokyo, JP;
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Chiyoda-Ku, Tokyo, JP;
Abstract
To obtain high linearity without sacrificing light-receiving sensitivity and a high speed, an avalanche photodiode includes an avalanche layer () formed on a first light absorption layer (), an n-field control layer () formed on the avalanche layer (), and a second light absorption layer () formed on the field control layer (). If a reverse bias voltage is applied, a donor impurity in the field control layer () ionizes, and a high electric field is induced in the avalanche layer (). The n-type doping amount in the field control layer () is set such that the impurity concentration in the second light absorption layer () sufficiently depletes at the time of reverse bias application.