The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Nov. 28, 2017
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Dong Yean Oh, Seoul, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6653 (2013.01); H01L 29/4991 (2013.01); H01L 29/6656 (2013.01); H01L 27/092 (2013.01);
Abstract
In a method for manufacturing a transistor, a gate structure may be formed on a semiconductor substrate. A first material layer may be formed on the gate structure to expose an upper sidewall of the gate structure. A spacer including a second material layer may be formed on the upper sidewall of the gate structure. The first material layer may be isotropically etched using the spacer as an etch mask to form a space. An insulating interlayer may be formed on the semiconductor substrate. The insulating interlayer may not be formed in the space.