The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Oct. 08, 2015
Jorge A. Kittl, Round Rock, TX (US);
Ganesh Hegde, Austin, TX (US);
Rwik Sengupta, Austin, TX (US);
Borna J. Obradovic, Leander, TX (US);
Mark S. Rodder, Dalias, TX (US);
Jorge A. Kittl, Round Rock, TX (US);
Ganesh Hegde, Austin, TX (US);
Rwik Sengupta, Austin, TX (US);
Borna J. Obradovic, Leander, TX (US);
Mark S. Rodder, Dalias, TX (US);
Abstract
Methods of forming a semiconductor device are provided. The methods may include forming a plurality of fin-shaped channels on a substrate, forming a gate structure crossing over the plurality of fin-shaped channels and forming a source/drain adjacent a side of the gate structure. The source/drain may cross over the plurality of fin-shaped channels and may be electrically connected to the plurality of fin-shaped channels. The methods may also include forming a metallic layer on an upper surface of the source/drain and forming a conductive contact on the metallic layer opposite the source/drain. The conductive contact may have a first length in a longitudinal direction of the metallic layer that is less than a second length of the metallic layer in the longitudinal direction of the metallic layer.