The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Dec. 31, 2015
Hangzhou Silan Microelectronics Co., Ltd., Hangzhou, CN;
Hangzhou Silan Integrated Circuit Co., Ltd., Hangzhou, CN;
Changjun Zhang, Hangzhou, CN;
Feng Ji, Hangzhou, CN;
Ping Wang, Hangzhou, CN;
Zuyin Chen, Hangzhou, CN;
HANGZHOU SILAN MICROELECTRONICS CO., LTD., Hangzhou, CN;
HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD., Hangzhou, CN;
Abstract
The present disclosure relates to a dielectrically isolated semiconductor device and a method for manufacturing the same. The dielectrically isolated semiconductor device includes a semiconductor substrate, a first semiconductor layer above the semiconductor substrate, a second semiconductor layer above the first semiconductor layer, a semiconductor island in the second semiconductor layer, and a first dielectric isolation layer surrounding a bottom and sidewalls of the semiconductor island. The first dielectric isolation layer includes a first portion which is formed from a portion of the first semiconductor layer and extending along the bottom of the semiconductor island, and a second portion which is formed from a portion of the second semiconductor layer and extending along the sidewalls of the semiconductor island. The dielectrically isolated semiconductor devices needs no an SOI wafer and reduces manufacturing cost.