The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Mar. 23, 2018
Renesas Electronics Corporation, Tokyo, JP;
Tatsuya Kunikiyo, Tokyo, JP;
Hidenori Sato, Ibaraki, JP;
Yotaro Goto, Ibaraki, JP;
Fumitoshi Takahashi, Ibaraki, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A reduction is achieved in the power consumption of a solid-state imaging element including a photoelectric conversion element which converts incident light to charge and a transistor which converts the charge obtained in the photoelectric conversion element to voltage. A photodiode and a charge read transistor which are included in a pixel in the CMOS solid-state imaging element are provided in a semiconductor substrate, while an amplification transistor included in the foregoing pixel is provided in a semiconductor layer provided over the semiconductor substrate via a buried insulating layer. In the semiconductor substrate located in a buried insulating layer region, a p-type back-gate semiconductor region for controlling a threshold voltage of the amplification transistor is provided.