The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Oct. 02, 2017
Applicant:
Kulicke and Soffa Industries, Inc., Fort Washington, PA (US);
Inventors:
Robert N. Chylak, Newtown, PA (US);
Dominick A. DeAngelis, Villanova, PA (US);
Horst Clauberg, Warwick, PA (US);
Assignee:
KULICKE AND SOFFA INDUSTRIES, INC., Fort Washington, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/03 (2006.01); H01L 25/10 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/75 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01); H01L 25/03 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 24/29 (2013.01); H01L 24/48 (2013.01); H01L 24/94 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13624 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29191 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/32013 (2013.01); H01L 2224/32105 (2013.01); H01L 2224/32106 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73103 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/759 (2013.01); H01L 2224/7565 (2013.01); H01L 2224/7598 (2013.01); H01L 2224/75251 (2013.01); H01L 2224/75252 (2013.01); H01L 2224/75301 (2013.01); H01L 2224/75343 (2013.01); H01L 2224/75348 (2013.01); H01L 2224/75349 (2013.01); H01L 2224/75744 (2013.01); H01L 2224/75745 (2013.01); H01L 2224/75981 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/8109 (2013.01); H01L 2224/8112 (2013.01); H01L 2224/8121 (2013.01); H01L 2224/81121 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81201 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81205 (2013.01); H01L 2224/81207 (2013.01); H01L 2224/81409 (2013.01); H01L 2224/81424 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/81906 (2013.01); H01L 2224/81907 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/94 (2013.01); H01L 2224/95 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00012 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/20102 (2013.01); H01L 2924/20103 (2013.01); H01L 2924/20104 (2013.01); H01L 2924/20105 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20301 (2013.01); H01L 2924/20302 (2013.01); H01L 2924/20303 (2013.01); H01L 2924/20304 (2013.01); H01L 2924/20305 (2013.01); H01L 2924/20306 (2013.01); H01L 2924/20307 (2013.01);
Abstract
A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.