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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10297562 B1

PDFFull Text
Date of Patent:
May. 21, 2019

Filed:

Mar. 08, 2018

Semiconductor device and method of manufacturing a semiconductor device

Applicant:

Ablic Inc., Chiba-shi, Chiba, JP;

Inventors:

Kaku Igarashi, Chiba, JP;

Shinjiro Kato, Chiba, JP;

Hisashi Hasegawa, Chiba, JP;

Masaru Akino, Chiba, JP;

Yukihiro Imura, Chiba, JP;

Assignee:

ABLIC INC., Chiba, JP;

Attorney:

Brinks Gilson & Lione

Primary Examiner:

Nitin Parekh

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/02107 (2013.01); H01L 24/03 (2013.01); H01L 23/3192 (2013.01); H01L 23/562 (2013.01); H01L 2224/0226 (2013.01); H01L 2224/02123 (2013.01); H01L 2224/02251 (2013.01); H01L 2224/02255 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85375 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/3512 (2013.01);
Abstract

Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.

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