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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10297526 B1

PDFFull Text
Date of Patent:
May. 21, 2019

Filed:

Dec. 09, 2015

Compound semiconductor device structures comprising polycrystalline cvd diamond

Applicant:

Rfhic Corporation, Anyang, KR;

Inventors:

Frank Yantis Lowe, Phoenix, AZ (US);

Daniel Francis, Oakland, CA (US);

Firooz Nasser-Faili, Log Gatos, CA (US);

Daneil James Twitchen, High Wycombe, GB;

Assignee:

RFHIC CORPORATION, Anyang, KR;

Attorney:

Patent Office of Dr. Chung Park

Primary Examiner:

Andy Huynh

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 23/373 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3732 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02115 (2013.01); H01L 21/02304 (2013.01); H01L 21/02376 (2013.01); H01L 21/02444 (2013.01); H01L 21/02527 (2013.01); H01L 21/02639 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 21/02271 (2013.01);
Abstract

A semiconductor device structure includes a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material. The layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm. The effective thermal boundary resistance as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 mK/GW with a variation of no more than 12 mK/GW as measured across the semiconductor device structure. The layer of single crystal compound semiconductor material has one or both of the following characteristics:

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