The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Jan. 13, 2015
Sachem, Inc., Austin, TX (US);
Paul Vermeulen, Eindhoven, NL;
Craig Allen, Austin, TX (US);
SACHEM, Inc., Austin, TX (US);
Abstract
The present invention provides a process for selectively etching molybdenum or titanium relative to a oxide semiconductor film, including providing a substrate comprising a layer of oxide semiconductor and a layer comprising molybdenum or titanium on the layer of oxide semiconductor; preparing the substrate by applying a photoresist layer over the layer comprising molybdenum or titanium, and then patterning and developing the photoresist layer to form an exposed portion of the layer comprising molybdenum or titanium; providing a composition comprising ammonia or ammonium hydroxide, a quaternary ammonium hydroxide and a peroxide; and applying the composition to the exposed portion for a time sufficient to etch and remove the exposed portion of the layer comprising molybdenum or titanium, wherein the etching selectively removes the molybdenum or titanium relative to the oxide semiconductor.