The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Jun. 01, 2016
Applicant:
Soitec, Bernin, FR;
Inventors:
Marcel Broekaart, Theys, FR;
Luciana Capello, Grenoble, FR;
Isabelle Bertrand, Bernin, FR;
Norbert Colombet, Domene, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/322 (2006.01); H01L 21/84 (2006.01); H01L 21/66 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 21/268 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/3226 (2013.01); H01L 21/76251 (2013.01); H01L 21/84 (2013.01); H01L 22/14 (2013.01); H01L 29/1079 (2013.01); H01L 21/2686 (2013.01); H01L 21/67115 (2013.01); H01L 21/76254 (2013.01);
Abstract
A process for the manufacture of a semiconductor element includes a stage of rapid heat treatment of a substrate comprising a charge-trapping layer, which is capable of damaging an RF characteristic of the substrate. The rapid heat treatment stage is followed by a healing heat treatment of the substrate between 700° C. and 1,100° C., for a period of time of at least 15 seconds.