The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

May. 09, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Zijin Lin, Beijing, CN;

Haisheng Zhao, Beijing, CN;

Xiaoguang Pei, Beijing, CN;

Zhilong Peng, Beijing, CN;

Dongjiang Sun, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/47 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 21/027 (2013.01); H01L 21/0271 (2013.01); H01L 21/0272 (2013.01); H01L 21/0274 (2013.01); H01L 21/3086 (2013.01); H01L 21/47 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01);
Abstract

A method for manufacturing thin film transistor, a method for manufacturing array substrate, an array substrate and a display device are provided. The method for manufacturing thin film transistor includes forming an intermediate layer on a substrate, patterning the intermediate layer to form an intermediate layer reserved region and an intermediate layer unreserved region, where the intermediate layer unreserved region corresponds to a pattern of a first structure layer, forming, on the substrate with a pattern of the intermediate layer, a material layer from which the first structure layer is formed, and removing the intermediate layer, and forming the pattern of the first structure layer through a portion of the material layer remaining on the substrate.


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