The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Sep. 25, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hiroyuki Kinoshita, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/263 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02579 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/263 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01);
Abstract
Examples of a high electron mobility transistor manufacturing method includes forming a buffer layer including a nitride semiconductor doped with any one of carbon, iron, and magnesium on a substrate, forming a Schottky layer on the buffer layer, and irradiating the Schottky layer and the buffer layer with electrons or protons.