The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Jun. 26, 2017
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Yong Hwan Hong, Gyeonggi-do, KR;
Byung Ryul Kim, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 29/26 (2006.01); G11C 29/56 (2006.01); G11C 29/52 (2006.01); G11C 29/12 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/44 (2013.01); G11C 16/04 (2013.01); G11C 16/349 (2013.01); G11C 29/26 (2013.01); G11C 29/52 (2013.01); G11C 29/56 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/1204 (2013.01);
Abstract
Provided herein is a fail bit counter. The fail bit counter includes a pass/fail data receiver receiving pass/fail data indicating whether memory cells coupled to a bit line sequentially pass or fail, and a fail bit accumulator receiving a fail bit generation signal from the pass/fail data receiver, and accumulating and counting fail bits which are generated.
Hong, Yong. (2019). Fail bit counter and semiconductor memory device having the same (U.S. Patent No. 10297336). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10297336
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile