The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Jun. 23, 2017
Gyrfalcon Technology Inc., Milpitas, CA (US);
Gyrfalcon Technology Inc., Milpitas, CA (US);
Abstract
Fabrication methods of forming memory subsystem of CNN based digital IC for AI are disclosed. The method in SLC technology includes: providing a metal layer, forming a via layer, forming a HSL, forming a MTJ element layer and then etching out unmasked portions of the MTJ element layer to form at least two groups of different sized MTJ elements. The method in MLC technology includes: providing a metal layer, forming a via layer, forming a first HSL, forming a first MTJ element layer, etching out unmasked portions of the first MTJ element layer to form lower MTJ elements, forming a second HSL, forming a second MTJ element layer and etching out unmasked portions of the second MTJ element layer to form upper MTJ elements. Same sized first MTJ element layer and the second HSL are formed together.