The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Mar. 21, 2018
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Jonghwa Shin, Daejeon, KR;

Yong-Hee Lee, Daejeon, KR;

Tae Yong Chang, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/355 (2006.01); H01L 21/027 (2006.01); H01L 29/06 (2006.01); G01N 21/41 (2006.01); G01N 33/53 (2006.01); G02B 1/02 (2006.01); G02B 3/00 (2006.01); G02B 5/18 (2006.01); G02F 1/01 (2006.01); G02F 1/35 (2006.01);
U.S. Cl.
CPC ...
G02F 1/3551 (2013.01); G01N 21/41 (2013.01); G01N 33/53 (2013.01); G02B 1/02 (2013.01); G02B 3/0087 (2013.01); G02B 5/18 (2013.01); G02F 1/0126 (2013.01); G02F 1/3515 (2013.01); H01L 21/027 (2013.01); H01L 29/06 (2013.01); G02F 1/3556 (2013.01); G02F 2202/06 (2013.01); G02F 2203/01 (2013.01); G02F 2203/02 (2013.01);
Abstract

A wideband ultra-high refractive index mesoscopic crystal structure including: a first layer with high-conductivity unit bodies arranged in a matrix form, and a low-conductivity material disposed between the high-conductivity unit bodies; a second layer with high-conductivity unit bodies arranged in a matrix form, and a low-conductivity material disposed between the high-conductivity unit bodies; a first shield layer existing between the first and second layers and made of a low-conductivity material; and a second shield layer made of a low-conductivity material disposed on a side of the second layer such that the second layer is disposed between the first shield layer and the second shield layer, wherein the high-conductivity unit bodies in the first layer overlap the high-conductivity unit bodies arranged in the second layer, and wherein the first layer, the first shield layer, the second layer, and the second shield layer are sequentially stacked one or more times.


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