The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Apr. 28, 2017
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Benny Pekka Herzogenrath, Stuttgart, DE;

Johannes Classen, Reutlingen, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); G01C 19/5712 (2012.01); G01P 15/125 (2006.01); G01C 19/56 (2012.01); G01C 19/5656 (2012.01); G01P 1/00 (2006.01); G01P 15/08 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0008 (2013.01); B81C 1/00174 (2013.01); B81C 1/00476 (2013.01); G01C 19/56 (2013.01); G01C 19/5656 (2013.01); G01C 19/5712 (2013.01); G01P 1/003 (2013.01); G01P 15/0802 (2013.01); G01P 15/125 (2013.01); B81B 2201/025 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/0181 (2013.01); B81B 2203/0338 (2013.01); B81C 2201/0132 (2013.01); G01P 2015/0814 (2013.01); G01P 2015/0831 (2013.01); G01P 2015/0834 (2013.01); G01P 2015/0837 (2013.01);
Abstract

A micromechanical sensor that is produced surface-micromechanically includes at least one mass element formed in a third functional layer that is non-perforated at least in certain portions. The sensor has a gap underneath the mass element that is formed by removal of a second functional layer and at least one oxide layer. The removal of the at least one oxide layer takes place by introducing a gaseous etching medium into a defined number of etching channels arranged substantially parallel to one another. The etching channels are configured to be connected to a vertical access channel in the third functional layer.


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