The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Aug. 25, 2017
Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventors:

Kyung Whan Kim, Seoul, KR;

Dong Uk Lee, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/012 (2006.01); H03K 5/134 (2014.01); G01R 31/317 (2006.01); H03K 5/00 (2006.01); H03K 5/06 (2006.01);
U.S. Cl.
CPC ...
H03K 3/012 (2013.01); G01R 31/317 (2013.01); H03K 5/134 (2014.07); H03K 5/06 (2013.01); H03K 2005/00019 (2013.01); H03K 2005/00195 (2013.01);
Abstract

A semiconductor device includes a first mode signal generation circuit suitable for generating a first mode signal in response to a command, the first mode signal being enabled in the case where a first period determined depending on a current characteristic of a first MOS transistor is longer than a second period determined by a first passive element; and a second mode signal generation circuit suitable for generating a second mode signal in response to the command, the second mode signal being enabled in the case where a third period determined by a second passive element is longer than a fourth period determined depending on a current characteristic of a second MOS transistor.


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