The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Sep. 08, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventor:
Thomas William Arell, Basking Ridge, NJ (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/19 (2006.01); H03F 3/193 (2006.01); H03F 1/42 (2006.01); H03F 1/02 (2006.01); H03F 1/22 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H03F 1/0205 (2013.01); H03F 1/223 (2013.01); H03F 1/226 (2013.01); H03F 1/42 (2013.01); H03F 3/1935 (2013.01); H03F 2200/451 (2013.01);
Abstract
A power amplifier comprising a bipolar transistor connected in cascode with a field effect transistor (FET) such as a pseudomorphic high electron mobility transistor (PHEMT) device. The bipolar transistor has a common emitter and the FET a common gate. Advantageously, the bipolar transistor is a heterojunction bipolar transistor (HBT); and the HBT and the FET may be integrated on a single die. Illustrative materials for the HBT and FET are Gallium Nitride, Indium Phosphide, or Gallium Arsenide/Indium Gallium Phosphide.