The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Mar. 30, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Damiano Gadler, Villach, AT;

Albino Pidutti, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/06 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01); H02M 7/217 (2006.01);
U.S. Cl.
CPC ...
H02M 7/217 (2013.01); H02M 1/08 (2013.01); H02M 7/06 (2013.01); H02M 7/062 (2013.01); H02M 2001/0048 (2013.01);
Abstract

In some examples, a rectifier device includes a semiconductor substrate, an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode connected parallel to the load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, a control circuit is coupled to a gate electrode of the first MOS transistor and configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased. A gate driver circuit is included in the control circuit and includes a buffer capacitor and a cascade of two or more transistor stages connected between the buffer capacitor and the gate electrode of the first MOS transistor.


Find Patent Forward Citations

Loading…