The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Apr. 18, 2017
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Kazunori Watanabe, Kariya, JP;

Tomotaka Suzuki, Kariya, JP;

Tomoyuki Muraho, Kariya, JP;

Yoshinori Hayashi, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H02M 1/088 (2006.01); H02M 7/5387 (2007.01); H03K 17/04 (2006.01); H03K 17/0412 (2006.01); H03K 17/687 (2006.01); H02M 1/00 (2006.01); H02P 27/08 (2006.01); H03K 17/12 (2006.01);
U.S. Cl.
CPC ...
H02M 1/088 (2013.01); H02M 7/53871 (2013.01); H02M 7/53875 (2013.01); H03K 17/0406 (2013.01); H03K 17/04123 (2013.01); H03K 17/6871 (2013.01); H02M 2001/0054 (2013.01); H02P 27/08 (2013.01); H03K 17/127 (2013.01); Y02B 70/1491 (2013.01);
Abstract

In a drive circuit, a rate adjuster adjusts a charging speed of a MOSFET to be faster than the charging speed of an IGBT when a drive state changer changes the first switching element from the off state to the on state first, and changes the second switching element from the off state to the on state next. The rate adjuster also adjusts a discharging speed of the MOSFET to be faster than the discharging speed of the IGBT when the drive state changer changes the MOSFET from the on state to the off state first, and changes the IGBT from the on state to the off state next.


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