The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Sep. 10, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Dirk Ahlers, Munich, DE;

Frank Auer, Roehrmoos, DE;

Herbert Gietler, Villach, AT;

Michael Lenz, Zorneding, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H01L 27/02 (2006.01); H01L 27/07 (2006.01); H02K 11/04 (2016.01); H02M 7/217 (2006.01); H02M 7/219 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H01L 27/0207 (2013.01); H01L 27/0733 (2013.01); H02K 11/046 (2013.01); H02M 7/217 (2013.01); H02M 7/219 (2013.01); H02M 2001/0048 (2013.01); H02M 2007/2195 (2013.01); Y02B 70/1408 (2013.01);
Abstract

A rectifying device includes a power transistor, a gate control circuit and a capacitor structure arranged on a single semiconductor die. The power transistor includes a source or emitter terminal connected to a first terminal of the rectifying device, a drain or collector terminal connected to a second terminal of the rectifying device, and a gate. The gate control circuit is operable to control a gate voltage at the gate of the power transistor based on at least one parameter relating to at least one of a voltage and a current between the first terminal and the second terminal.


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