The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Oct. 21, 2016
Applicant:

Nlt Technologies, Ltd., Kawasaki, Kanagawa, JP;

Inventors:

Hiroyuki Sekine, Kawasaki, JP;

Yusuke Yamamoto, Kawasaki, JP;

Assignee:

NLT Technologies, Ltd., Kawasaki, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/36 (2006.01); H02H 9/04 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G09G 3/20 (2006.01);
U.S. Cl.
CPC ...
H02H 9/045 (2013.01); G09G 3/20 (2013.01); G09G 3/36 (2013.01); H01L 27/124 (2013.01); H01L 29/7869 (2013.01); G09G 2330/025 (2013.01); G09G 2330/04 (2013.01);
Abstract

A protection circuit includes a control circuit that controls current between a first wiring and a second wiring and an application circuit that applies a voltage to the control circuit. The control circuit includes a first thin film transistor that controls the current. The application circuit includes second and third thin film transistors that are connected in series. Each of the second and third thin film transistors includes first and second gates. The first gate of the second thin film transistor is connected to the first wiring. The first gate of the third thin film transistor is connected to a connection point between the second and third thin film transistors. The second gates of the second thin film transistor and the third thin film transistor are connected to the second wiring. The application circuit applies a voltage of the connection point to a gate of the first thin film transistor.


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