The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Nov. 09, 2015
Applicants:

Olympus Corporation, Tokyo, JP;

The University of Tokyo, Tokyo, JP;

Kyushu University, National University Corporation, Fukuoka, JP;

Inventors:

Yoshiharu Ajiki, Tokyo, JP;

Isao Shimoyama, Tokyo, JP;

Kiyoshi Matsumoto, Tokyo, JP;

Tetsuo Kan, Tokyo, JP;

Koichi Karaki, Tokyo, JP;

Yasuo Sasaki, Tokyo, JP;

Masayuki Yahiro, Fukuoka, JP;

Akiko Hamada, Fukuoka, JP;

Chihaya Adachi, Fukuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/44 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); G01J 1/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/441 (2013.01); H01L 51/0068 (2013.01); H01L 51/0081 (2013.01); H01L 51/0091 (2013.01); H01L 51/424 (2013.01); H01L 51/4213 (2013.01); H01L 51/4253 (2013.01); G01J 1/42 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

Provided is a photodetector including: an organic semiconductor () having protrusions; a metal layer () added onto the organic semiconductor (), for promoting at least one of localized plasmon resonance and surface plasmon resonance in which electrons are excited through irradiation of detection light; and a semiconductor () forming a junction with the metal layer (), for allowing electrons excited through the plasmon resonance to pass through the junction () with the metal layer ().


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