The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jun. 26, 2017
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Tetsuhiro Tanaka, Tokyo, JP;
Akihisa Shimomura, Tochigi, JP;
Yasumasa Yamane, Kanagawa, JP;
Ryo Tokumaru, Kanagawa, JP;
Yuhei Sato, Kanagawa, JP;
Kazuhiro Tsutsui, Kanagawa, JP;
Abstract
A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cmand less than or equal to 1E16 molecules/cm.