The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Nov. 08, 2016
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/93 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/45 (2006.01); B82Y 10/00 (2011.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); B82Y 10/00 (2013.01); H01L 21/02631 (2013.01); H01L 29/0676 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 2202/36 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01);
Abstract
The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.