The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Mar. 17, 2017
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;
Daisuke Arai, Saitama, JP;
Mizue Kitada, Saitama, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A MOSFET includes: a semiconductor base substrate having a super junction structure; and a gate electrode formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film. In a graph where a depth x at a predetermined depth position in the super junction structure is taken on an axis of abscissas, and an average positive charge density ρ(x) at the predetermined depth position in the super junction structure is taken on an axis of ordinates, the average positive charge density ρ(x) at a predetermined depth position of the super junction structure when the super junction structure is depleted by turning off the MOSFET is expressed by an upward convex curve projecting in a right upward direction.