The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Mar. 01, 2017
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Hisashi Saito, Yokohama, JP;
Tatsuo Shimizu, Shinagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/04 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/4966 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/1066 (2013.01);
Abstract
A semiconductor device of an embodiment includes a nitride semiconductor layer, a first electrode provided on the nitride semiconductor layer, a second electrode provided on the nitride semiconductor layer, a third electrode provided above the nitride semiconductor layer, the third electrode provided between the first electrode and the second electrode, the third electrode containing a polycrystalline nitride semiconductor containing a p-type impurity, and a first insulating layer provided between the nitride semiconductor layer and the third electrode.