The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Feb. 12, 2015
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
An object of the present invention is to provide high-performance highly-reliable power semiconductor device. The semiconductor device according to the present invention is provided with a first conductive type semiconductor substrate, a drain electrode formed on a back side of the semiconductor substrate, a drift layer of the first conductive type formed on a surface side of the semiconductor substrate, a source area of the first conductive type, a current diffused layer of the first conductive type, a body layer of a second conductive type reverse to the first conductive type in contact with the source area and the current diffused layer, a trench which pierces the source area, the body layer and the current diffused layer, which is shallower than the body layer, and the bottom of which is in contact with the body layer, a high-concentration JFET layer of the first conductive type formed up to a deeper position than a boundary between the current diffused layer and the body layer, electrically connecting the drift layer and the current diffused layer, and having higher impurity concentration than the drift layer, a gate insulating film formed on an inner wall of the trench, and a gate electrode formed on the gate insulating film.