The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Apr. 19, 2017
Applicant:
Qromis, Inc., Santa Clara, CA (US);
Inventors:
Vladimir Odnoblyudov, Danville, CA (US);
Dilip Risbud, San Jose, CA (US);
Cem Basceri, Los Gatos, CA (US);
Assignee:
Qromis, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 21/76254 (2013.01); H01L 27/1203 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A gallium nitride based integrated circuit architecture includes a first electronic device including a first set of III-N epitaxial layers and a second electronic device including a second set of III-N epitaxial layers. The gallium nitride based integrated circuit architecture also includes one or more interconnects between the first electronic device and the second electronic device. The first electronic device and the second electronic device are disposed in a chip scale package.