The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Jan. 11, 2018
Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventor:

Do Youn Kim, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/11556 (2017.01); H01L 21/311 (2006.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/31105 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first channel layers arranged in a first direction. The semiconductor device may include second channel layers adjacent to the first channel layers in a second direction crossing the first direction and arranged in the first direction. The semiconductor device may include insulating layers stacked while surrounding side walls of the first and second channel layers. The semiconductor device may include conductive layers interposed between the insulating layers, and including first metal patterns extended in the first direction and second metal patterns extended in the first direction while surrounding the side walls of the first channel layers.


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