The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jan. 20, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Wen Pin Peng, Clifton Park, NY (US);
Min-hwa Chi, San Jose, CA (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/30604 (2013.01); H01L 21/823431 (2013.01); H01L 29/0657 (2013.01);
Abstract
A multi-Vt FinFET includes a semiconductor substrate, multiple first fins coupled to the semiconductor substrate having a first fin pitch, and multiple second fins coupled to the semiconductor substrate having a second fin pitch larger than the first fin pitch. The semiconductor structure further includes transistor(s) on the multiple first fins, and transistor(s) on the multiple second fins, a threshold voltage of the transistor(s) on the multiple second fins being higher than that of the transistor(s) on the multiple first fins.