The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Mar. 17, 2015
Applicant:
Newport Fab, Llc, Newport Beach, CA (US);
Inventors:
Edward Preisler, San Clemente, CA (US);
Todd Thibeault, Irvine, CA (US);
Assignee:
Newport Fab, LLC, Newport Beach, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/82 (2006.01); H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 21/8249 (2013.01);
Abstract
A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device is disclosed. The BiCMOS device includes a CMOS device in a CMOS region, a PNP bipolar device in a bipolar region, and an NPN bipolar device in the bipolar region. The NPN bipolar device has an extrinsic base being self-aligned with an emitter of the NPN bipolar device. The extrinsic base of the NPN bipolar device and an emitter of the PNP bipolar device share a P type dopant.