The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Mar. 23, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Yoshinao Miura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 27/088 (2013.01); H01L 29/0653 (2013.01); H01L 29/41775 (2013.01); H01L 29/42356 (2013.01); H01L 23/528 (2013.01);
Abstract

An object of the present invention is to shorten the switching delay time of a semiconductor device. Transistor units are provided between a source bus line and a drain bus line that are provided apart from each other in a first direction, and a plurality of gate electrodes that extends in the first direction and is provided apart from each other in a second direction orthogonal to the first direction is provided in the transistor units. One ends of the gate electrodes on the source bus line side are coupled by a gate connection line extending in the second direction, and a gate bus line electrically coupled to the gate connection line is provided above the gate connection line. The gate electrodes and the gate connection line are formed using a wiring layer of the first layer, the source bus line and the drain bus line are formed using a wiring layer of the second layer, and the gate bus line is formed using a wiring layer of the third layer.


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