The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Mar. 19, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jun-soo Lee, Seoul, KR;

Jae-hoon Kim, Seoul, KR;

Kyung-hak Min, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/68 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68 (2013.01); H01J 37/32724 (2013.01); H01J 37/32743 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/6833 (2013.01); H01L 21/68707 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/334 (2013.01);
Abstract

The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.


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