The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
May. 17, 2017
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Po-Chun Lin, Changhua County, TW;
Chin-Lung Chu, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 23/482 (2006.01); H01L 25/065 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 21/4853 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/482 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/034 (2013.01); H01L 2224/0311 (2013.01); H01L 2224/03632 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/0605 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/06179 (2013.01); H01L 2224/06183 (2013.01); H01L 2224/06515 (2013.01); H01L 2224/113 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14179 (2013.01); H01L 2224/14183 (2013.01); H01L 2224/14515 (2013.01); H01L 2224/16013 (2013.01); H01L 2224/16058 (2013.01); H01L 2224/16059 (2013.01); H01L 2224/16137 (2013.01); H01L 2224/16141 (2013.01); H01L 2224/17051 (2013.01); H01L 2224/1751 (2013.01); H01L 2224/17152 (2013.01); H01L 2224/17179 (2013.01); H01L 2224/17183 (2013.01); H01L 2225/065 (2013.01);
Abstract
A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.