The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Feb. 27, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Nam-Gun Kim, Yongin-si, KR;
Sangmin Lee, Hwaseong-si, KR;
Sinhae Do, Busan, KR;
Seok-Won Cho, Suwon-si, KR;
Taeseop Choi, Hwaseong-si, KR;
Kon Ha, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes stacking on a substrate an etching target layer, a first mask layer, and a photoresist layer, irradiating extreme ultraviolet (EUV) radiation on the photoresist layer to form a photoresist pattern, patterning the first mask layer to form a first mask pattern using the photoresist pattern as an etching mask, and patterning the etching target layer to form a target pattern using the first mask pattern as an etching mask. The first mask layer includes at least one of a silicon layer and a titanium oxide layer.