The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jun. 08, 2015
Seren Photonics Limited, Bridgend, GB;
Tao Wang, Sheffield, GB;
SEREN PHOTONICS LIMITED, Bridgend Mid Glamorgan, GB;
Abstract
A method of growing a group III nitride crystal structure comprises: providing a silicon substrate (); forming a first mask () on the substrate, the mask having a plurality of apertures () through it each exposing a respective area of the silicon substrate; etching the silicon exposed by each of the apertures to form a respective recess () having a plurality of facets (); depositing a second mask over some of the facets of each recess leaving at least one of the facets () of each recess exposed; and growing group III nitride on the exposed facets () and then over the substrate to form a continuous layer.
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