The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
May. 05, 2015
Applicant:
Up Chemical Co., Ltd., Pyeongtaek-si, Gyeonggi-do, KR;
Inventors:
Won Seok Han, Anseong-si, KR;
Won Yong Koh, Daejeon, KR;
Assignee:
UP CHEMICAL CO., LTD., Pyeongtaek-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/345 (2013.01); C23C 16/45525 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01);
Abstract
The present invention relates to a method for forming a silicon-containing thin film using a chlorosilane compound represented by SiCl(wherein, n is an integer of from about 3 to about 10), and a high-quality silicon nitride thin film can be formed to a uniform thickness on a surface including a protrusion or recess having a high aspect ratio by an atomic layer deposition method using an ammonia gas at a low temperature of particularly about 560° C. or less.