The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Mar. 20, 2017
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Katsuyoshi Harada, Toyama, JP;

Yushin Takasawa, Toyama, JP;

Satoshi Shimamoto, Toyama, JP;

Hiroki Hatta, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); C23C 16/401 (2013.01); C23C 16/455 (2013.01); C23C 16/45523 (2013.01); C23C 16/45557 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01);
Abstract

A method of manufacturing a semiconductor device, includes forming a film containing a predetermined element on a substrate by supplying a precursor containing the predetermined element to the substrate having a first temperature in a process chamber, changing a temperature of the substrate to a second temperature higher than the first temperature under an atmosphere containing a first oxygen-containing gas in the process chamber, and oxidizing the film while maintaining the temperature of the substrate at the second temperature under an atmosphere containing a second oxygen-containing gas in the process chamber.


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