The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10290348 B1

PDF
Full Text
Expired
Date of Patent:
May. 14, 2019

Filed:

May. 07, 2018
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventor:

Federico Nardi, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01);
Abstract

Systems and methods for providing a one-time programmable chalcogenide-based memory with improved memory cell IV characteristics are described. The memory cells of the one-time programmable chalcogenide-based memory may include a chalcogenide-based material. The chalcogenide-based material may comprise a germanium-antimony-tellurium compound (GST), a chalcogenide glass, or a chalcogenide alloy such as GeSeAsor GeTeAs. The chalcogenide-based memory may be written as a one-time programmable memory in which forming operations are performed on only memory cells that are to be programmed to store a first binary value (e.g., binary '1' data values) and not performed on other memory cells that are to store a second binary value different from the first binary value (e.g., binary '0' data values).


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