The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Aug. 21, 2015
Applicant:
Alacrity Semiconductors, Inc., New Haven, CT (US);
Inventors:
James Lin, New Haven, CT (US);
Tso-Ping Ma, New Haven, CT (US);
Assignee:
Alacrity Semiconductors, Inc., New Haven, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/105 (2006.01); G11C 29/44 (2006.01); G11C 29/00 (2006.01); G11C 7/10 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2275 (2013.01); G11C 11/22 (2013.01); G11C 29/4401 (2013.01); G11C 29/787 (2013.01); H01L 27/105 (2013.01); G11C 7/1006 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/4402 (2013.01);
Abstract
Methods and apparatus for programming a ferroelectric memory according to various desired and constraining characteristics, such as the retention of the data written to the memory, the endurance of the memory itself, both retention and endurance, power consumption, constraints on available voltage levels, etc. The characteristics of the signal used to write the data to memory (e.g., voltage, power, etc.) are selected to as to satisfy the various desired and constraining characteristics.