The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jul. 06, 2016
Applicant:
University of Houston System, Houston, TX (US);
Inventors:
Assignee:
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); C01B 19/00 (2006.01); C01G 39/06 (2006.01); C01G 41/00 (2006.01); G02B 6/10 (2006.01); G02B 6/30 (2006.01); H01L 31/0224 (2006.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
G02B 6/1226 (2013.01); C01B 19/007 (2013.01); C01G 39/06 (2013.01); C01G 41/00 (2013.01); G02B 6/107 (2013.01); G02B 6/30 (2013.01); H01L 31/022408 (2013.01); H01L 33/38 (2013.01);
Abstract
Electronic-photonic integrated circuits (EPICs), such a monolithically integrated circuit, are considered to be next generation technology that takes advantage of high-speed optical communication and nanoscale electronics. Atomically thin transition metal dichalcogenides (TMDs) may serve as a perfect platform to realize EPIC. The generation and detection of light by a monolayer TMD at nanoscale through surface plasmon polaritons (SPPs) may be utilized to provide optical communication. The bidirectional nature of the TMDs allow such a layer to be utilizes as part of emitters or photodetectors for EPICs.