The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jun. 24, 2016
Applicant:
Up Chemical Co., Ltd., Pyeongtaek-si, KR;
Inventors:
Won-Jun Lee, Seoul, KR;
Jae-Min Park, Seoul, KR;
Assignee:
UP Chemical Co., Ltd., Pyeongtaek-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/56 (2006.01); C23C 18/12 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/34 (2013.01); C23C 16/56 (2013.01); C23C 18/1204 (2013.01); C23C 18/1279 (2013.01); C23C 18/1295 (2013.01); H01L 21/28556 (2013.01); H01L 21/76862 (2013.01); H01L 21/76864 (2013.01); H01L 21/76873 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 21/2885 (2013.01); H01L 21/76877 (2013.01);
Abstract
The present invention relates to a copper metal film to be used as a seed layer for electrodeposition for forming a copper interconnect for a semiconductor device, a method for preparing the same, and a method for forming a copper interconnect for a semiconductor device using the copper metal film.