The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Nov. 18, 2013
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Cengiz S. Ozkan, San Diego, CA (US);

Mihrimah Ozkan, San Diego, CA (US);

Ali B. Guvenc, San Diego, CA (US);

Rajat K. Paul, San Diego, CA (US);

Jian Lin, San Diego, CA (US);

Maziar Ghazinejad, San Diego, CA (US);

Miro Penchev, San Diego, CA (US);

Shirui Guo, San Diego, CA (US);

Jiebin Zhong, San Diego, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C01B 32/186 (2017.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); B82Y 40/00 (2011.01); H01L 31/028 (2006.01); H01L 31/068 (2012.01); H01L 31/076 (2012.01); H01L 29/778 (2006.01); H01L 31/18 (2006.01); H01L 29/41 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 27/30 (2006.01); H01G 9/145 (2006.01); H01G 9/042 (2006.01); H01G 4/008 (2006.01); H01G 9/20 (2006.01); H01G 11/36 (2013.01); H01G 11/52 (2013.01); B82Y 20/00 (2011.01); B82Y 10/00 (2011.01); H01L 51/42 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/44 (2013.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01B 32/186 (2017.08); C23C 16/26 (2013.01); H01G 4/008 (2013.01); H01G 9/042 (2013.01); H01G 9/145 (2013.01); H01G 9/20 (2013.01); H01G 9/2031 (2013.01); H01G 9/2072 (2013.01); H01G 11/36 (2013.01); H01G 11/52 (2013.01); H01L 21/0262 (2013.01); H01L 21/02491 (2013.01); H01L 21/02527 (2013.01); H01L 21/02664 (2013.01); H01L 27/302 (2013.01); H01L 29/0673 (2013.01); H01L 29/1606 (2013.01); H01L 29/413 (2013.01); H01L 29/7781 (2013.01); H01L 31/028 (2013.01); H01L 31/068 (2013.01); H01L 31/076 (2013.01); H01L 31/1804 (2013.01); C01B 2204/04 (2013.01); C01B 2204/22 (2013.01); H01L 51/0048 (2013.01); H01L 51/424 (2013.01); Y02E 10/542 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01); Y02E 60/13 (2013.01); Y02P 70/521 (2015.11);
Abstract

Methods of fabricating a graphene film are disclosed. An example method can include providing a substrate, heating the substrate between about 600° C. and about 1100° C. in a chamber, and introducing a carbon source into the chamber at a temperature between about 600° C. and about 1100° C. for about 10 seconds to about 1 minute. The method can further include cooling the substrate to about room temperature to form the graphene film Methods of fabricating pillared graphene nano structures and graphene based devices are also provided.


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